State-of-the-art storage for entry level HDD upgrades
Upgrading from a hard disk drive (HDD) should be easy and affordable and that’s where OCZ TR200 SSDs come in.
Designed to boost the speed of your notebook or PC over conventional HDDs, the TR200 Series leverages Toshiba’s
advanced 64-layer 3D BiCS FLASH™, to deliver well-balanced performance, reliability, and value that will transform
your mobile or desktop system.
Instant Performance Upgrade
Up your productivity with the TR200 Series and enjoy faster boot ups, file transfers, and system responsiveness. Say
goodbye to hard disk drive lag and get a computing experience worthy of your time.
With a 64-layer vertically stacked cell structure, Toshiba BiCS FLASH technology enables higher capacity, endurance,
performance, and efficiency in the same footprint, delivering a state-of-the-art storage experience.
Performance Made Affordable
Upgrading to an SSD from a conventional HDD can feel like you’ve purchased an entirely new system. TR200 SSDs
balance price and performance so you have enough funds left over for other upgrades.
Improved for On-the-Go
Compared to hard disk drives, Toshiba OCZ TR200 SSDs also offer improved durability and power consumption, which can translate into longer battery life to keep you up and running longer.
SSD Utility SSD Management Software
The SSD Utility was designed to help your OCZ drive thrive and lets you be in control of maintenance, monitoring, SSD tuning, OS tuning and more!
3D Flash Memory
Built with latest BiCS FLASH™ memory
Longer Battery Life
Lower power consumption compared to HDDs for longer battery life with built-in power management modes.
Quality & Reliability
Toshiba technology built into every drive
Leverages a Toshiba SSD controller
Well-balanced price to performance ratio
Slim Form Factor
Sleek housing offers slimmer 7mm height for compatibility with thin notebooks
Performance 240 GB 480 GB 960 GB
Sequential Read Speed1 Up to 555 MB/s Up to 555 MB/s Up to 555 MB/s
Sequential Write Speed1 Up to 540 MB/s Up to 540 MB/s Up to 540 MB/s
Random Read2 (4 KiB, QD32) Up to 79,000 IOPS Up to 82,000 IOPS Up to 81,000 IOPS
Random Write2 (4 KiB, QD32) Up to 87,000 IOPS Up to 88,000 IOPS Up to 88,000 IOPS
1 Sequential speeds are measured with ATTO v3.05, QD10.
2 4KiB random performance is measured with CrystalDiskMark 5.1.2 x64 QD32.
Capacities 240 GB, 480 GB, 960 GB
NAND Flash Memory Type 64-layer 3D BiCS TLC
Interface Serial ATA (SATA) 6 Gbit/s
Form Factor 2.5-inch, 7mm height
Dimensions 100.45 x 69.85 x 7.00 mm
240GB: 45.5g (typ.)
480GB: 45.6g (typ.)
960GB: 45.7g (typ.)
Supply Voltage: 5V ±5 %
Power Consumption Active Idle Up to 1.7 W (typ.)
100 Mw (typ.)
DevSleep Power 10 mW max
Endurance 240 GB 480 GB 960 GB
TBW (Total Bytes Written)3 60 TB 120 TB 240 TB
Daily Usage Guidelines4 55 GB/day 110 GB/day 219 GB/day
3 Definition and conditions of TBW (Terabytes Written) are based on JEDEC standard; JESD218A, February 2011, and defined for the service life.
4 Daily usage guidelines value is calculated by dividing TBW by